SIGC223T120R2CL edited by infineon technologies ai ps dd hv3, l 7121 - p , edition 2 , 03.09.2003 igbt chip in npt - technology this chip is used for: igbt - modules bsm150gb120dlc features: 1200v npt technology 180m chip short circuit prove positive temperature coefficient easy paralleling applications: drives g c e chip t ype v ce i cn die size package ordering code sigc223t120 r2cl 1200v 150a 14.4 x 15.5 mm 2 sawn on foil q67050 - a4286 - a101 mechanical parameter: raster size 14.4 x 15.5 area total / active 223.2 / 189.9 emitter pad size 8x( 3.67x6.77 ) gate pad size 1.49 x 1.51 mm 2 thickness 180 m wafer size 150 mm flat position 90 deg max.possible chips per wafer 54 pcs passivation frontside photoimide emitter metalization 3200 nm al si 1% collector metalization 1400 nm ni ag ? syst em suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
SIGC223T120R2CL edited by infineon technologies ai ps dd hv3, l 7121 - p , edition 2 , 03.09.2003 maximum ratings : parameter symbol value unit collector - emitter voltage , t j =25 c v ce 1200 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 450 a gate emitter voltage v ge 20 v operating junction and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip), t j =25 c, unless otherwise specified: value p arameter symbol conditions min. typ. max. unit collector - emitter breakdown voltage v (br)ces v ge =0v , i c =8 ma 1200 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =150a 1.8 2.2 2.6 gate - emitter threshold voltage v ge(th) i c =6ma , v ge =v ce 4.5 5.5 6.5 v zero gate voltage collector current i ces v ce =1200v , v ge =0v 900 a gate - emitter leakage current i ges v ce =0v , v ge =2 0v 600 na dynamic characteristics (tested at component): value parameter symbol conditions min. typ. ma x. unit input capacitance c iss - 11 - output capacitance c oss - - - reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz - 0.7 - nf switching characteristics (tested at component) , inductive load: value parameter symbol conditions 1) m in. typ. max. unit turn - on delay time t d(on) - 50 - rise time t r - 50 - turn - off delay time t d(off) - 570 - fall time t f t j =125 c v cc =600v, i c =150a v ge = 15v, r g =5.6 w - 40 - ns 1) values also influenced by parasitic l - and c - in measurement and pack age.
SIGC223T120R2CL edited by infineon technologies ai ps dd hv3, l 7121 - p , edition 2 , 03.09.2003 chip drawing:
SIGC223T120R2CL edited by infineon technologies ai ps dd hv3, l 7121 - p , edition 2 , 03.09.2003 further electrical characteristics: this chip data sheet refers to the device data sheet bsm150gb120dlc half - bridge 62mm description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sen sitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the info rmation herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties o f non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or p rotect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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